Improved Signal Detection for Ambient Backscatter Communications

In ambient backscatter communication (AmBC) systems, passive tags connect to a reader by reflecting an ambient radio frequency (RF) signal. However, the reader may not know the channel states and RF source parameters and can experience interference. The traditional energy detector (TED) appears to be an ideal solution. However, it performs poorly under these conditions. To address this, we propose two new detectors: (1) A joint correlation-energy detector (JCED) based on the first-order correlation of the received samples and (2) An improved energy detector (IED) based on the p-th norm of the received signal vector. We compare the performance of the IED and TED under generalized noise modeled using the McLeish distribution and derive a general analytical formula for the area under the receiver operating characteristic (ROC) curves. Based on our results, both detectors outperform TED. For example, the probability of detection with a false alarm rate of 1% for JCED and IED is 14% and 5% higher, respectively, compared to TED. These gains are even higher using the direct interference cancellation (DIC) technique, with increases of 16% and 7%, respectively. Overall, our proposed detectors offer better performance than the TED, making them useful tools for improving AmBC system performance.Comment: This paper has got Major Revision by IEEE TGC

Enhancing AmBC Systems with Deep Learning for Joint Channel Estimation and Signal Detection

The era of ubiquitous, affordable wireless connectivity has opened doors to countless practical applications. In this context, ambient backscatter communication (AmBC) stands out, utilizing passive tags to establish connections with readers by harnessing reflected ambient radio frequency (RF) signals. However, conventional data detectors face limitations due to their inadequate knowledge of channel and RF-source parameters. To address this challenge, we propose an innovative approach using a deep neural network (DNN) for channel state estimation (CSI) and signal detection within AmBC systems. Unlike traditional methods that separate CSI estimation and data detection, our approach leverages a DNN to implicitly estimate CSI and simultaneously detect data. The DNN model, trained offline using simulated data derived from channel statistics, excels in online data recovery, ensuring robust performance in practical scenarios. Comprehensive evaluations validate the superiority of our proposed DNN method over traditional detectors, particularly in terms of bit error rate (BER). In high signal-to-noise ratio (SNR) conditions, our method exhibits an impressive approximately 20% improvement in BER performance compared to the maximum likelihood (ML) approach. These results underscore the effectiveness of our developed approach for AmBC channel estimation and signal detection. In summary, our method outperforms traditional detectors, bolstering the reliability and efficiency of AmBC systems, even in challenging channel conditions.Comment: Accepted for publication in the IEEE Transactions on Communication

Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings

We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.This work was partially supported by Spanish MCyT Nanoself I and II projects TIC2002-04096-C03 and TEC2005-05781-C03-03, the SANDiE Network of excellence (Contract No. NMP4-CT-2004-500101) and the AECI Spain-Tunisia bilateral research action No. 2/04/R.Peer reviewe

Kinetics of exciton photoluminescence in type-II semiconductor superlattices

The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness. Expressions that relate the parameters of the luminescence kinetics with statistical characteristics of the rough interface are obtained. The mean height and length of roughnesses in GaAs/AlAs superlattices are estimated from the experimental data.Comment: 3 PostScript figure